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(R) BAS70J / BAS70W BAS70-04W /BAS70-05W / BAS70-06W SMALL SIGNAL SCHOTTKY DIODE PRELIMINARY DATASHEET FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K NC A NC K A K2 K1 A K2 A K1 BAS70W DESCRIPTION Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD packages. Single and double diodes with different pining are available. K A2 A1 A1 K A2 A2 K1 BAS70-06W K2 K2 A1 A2 K1 A1 BAS70-05W SOT-323 BAS70-04W A 76 K BAS70J SOD-323 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Continuous forward current Surge non repetitive forward current Power dissipation (note 1) Tamb = 25C Maximum storage temperature range Maximum operating junction temperature * Maximum temperaturefor soldering during 10s tp = 10 ms SOD-323 SOT-323 - 65 to +150 150 260 C C C Parameter Repetitive peak reverse voltage Value 70 15 1 230 Unit V mA A mW Note 1: for double diodes, Ptot is the total dissipation of both diodes. *: dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj 1/5 June 1999 - Ed: 2A BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient (*) Parameters SOD-323 SOT-323 (*) Mounted on epoxy board, with recommended pad layout. Value 550 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VBR VF * IR ** Pulse test: Test Conditions Tj = 25C Tj = 25C Tj = 25C * tp = 380s, < 2% ** tp = 5 ms, < 2% Min. 70 Typ. Max. Unit V IR = 10A IF = 1mA VR = 50V 410 200 mV nA DYNAMIC CHARACTERISTICS Symbol C * Tj = 25C Tj = 25C Test Conditions VR = 0V IF = 5mA F = 1MHz Krakauer Method Min. Typ. Max. 2 100 Unit pF ps * Effective carrier life time. 2/5 BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W Fig. 1: Forward voltage drop versus forward current. IFM(A) 7E-2 Tj=100C Typical values Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E+1 Tj=100C 1E-2 Tj=25C Maximum values 1E+0 1E-1 Tj=25C 1E-3 Tj=25C Typical values 1E-2 VFM(V) 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Fig. 3: Reverse leakage current versus junction temperature(typical values). IR(A) 5E+2 VR=70V Fig. 4: Junction capacitance versus reverse voltage applied (typical values). C(pF) 2.0 1.0 F=1MHz Tj=25C 1E+2 1E+1 1E+0 1E-1 Tj(C) 1E-2 0 25 50 75 100 125 150 0.1 1 VR(V) 10 100 Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy FR4 with recommended pad layout, S(Cu)=35m). Fig. 6: Thermal resistance junction to ambient versus copper surface und er each lead (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 600 P=0.2W Zth(j-a)/Rth(j-a) 1.00 = 0.5 550 500 450 T = 0.2 0.10 = 0.1 400 350 tp Single pulse tp(s) 1E-1 1E+0 =tp/T S(Cu) (mm ) 300 0 5 10 15 20 25 30 35 40 45 50 0.01 1E-3 1E-2 1E+1 1E+2 3/5 BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W PACKAGE MECHANICAL DATA SOT-323 DIMENSIONS A REF. A1 D Millimeters Min. Typ. Max. Min. 1.1 0.1 0.4 2.0 1.25 0.65 1.8 0.1 0 2.1 0.2 2.4 0.3 30 2.2 0.031 0.0 0.010 0.8 0.0 0.25 0.1 1.8 1.15 Inches Typ. Max. 0.043 0.004 0.016 0.010 A A1 b c b 0.26 0.004 D E e H L 0.071 0.079 0.086 0.026 0.071 0.083 0.094 0.004 0.008 0.012 0 30 L 1.35 0.045 0.049 0.053 H E c e 4/5 BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W PACKAGE MECHANICAL DATA SOD-323 DIMENSIONS REF. Millimeters Min. E H b A1 Inches Min. 0 0.01 0.004 0.06 0.044 0.09 0.004 0.004 Max. 0.046 0.004 0.017 0.01 0.071 0.057 0.106 0.02 0.016 Max. 1.17 0.1 0.44 0.25 1.8 1.45 2.7 0.46 0.41 A A1 D A 0 0.25 0.1 1.52 1.11 2.3 0.1 0.1 b c D c Q1 E H L Q1 L Ordering type BAS70W BAS70-04W BAS70-05W BAS70-06W BAS70J Marking D28 D31 D30 D29 76 Package SOT-323 SOT-323 SOT-323 SOT-323 SOD-323 Weight 0.006g 0.006g 0.006g 0.006g 0.005g Base qty 3000 3000 3000 3000 3000 Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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